High-resolution subsurface microscopy of CMOS integrated circuits using radially polarized light
نویسندگان
چکیده
منابع مشابه
Widefield subsurface microscopy of integrated circuits.
We apply the numerical aperture increasing lens technique to widefield subsurface imaging of silicon integrated circuits. We demonstrate lateral and longitudinal resolutions well beyond the limits of conventional backside imaging. With a simple infrared widefield microscope (lambda(0) = 1.2 microm), we demonstrate a lateral spatial resolution of 0.26 microm (0.22 lambda(0)) and a longitudinal r...
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We present a high-spatial-resolution subsurface microscopy technique that significantly increases the numerical aperture of a microscope without introducing an additional spherical aberration. Consequently, the diffraction-limited spatial resolution is improved beyond the limit of standard subsurface microscopy. By realizing a numerical aperture of 3.4, we experimentally demonstrate a lateral s...
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Article history: Received 29 September 2011 Received in revised form 6 December 2011 Accepted 9 December 2011 Available online 22 December 2011
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By combining a high-resolution image from a standard camera with a low-resolution wavefront measurement from a Shack-Hartmann sensor, we numerically reconstruct a highresolution light field. We experimentally demonstrate the method with a commercially available microscope. ©2013 Optical Society of America OCIS codes: (110.0180) Microscopy; (110.1758) Computational imaging; (100.6640) Superresol...
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ژورنال
عنوان ژورنال: Optics Letters
سال: 2015
ISSN: 0146-9592,1539-4794
DOI: 10.1364/ol.40.005502